Keith Nelson of MIT has won the 2017 Bomem-Michelson Award.
Keith Nelson of MIT has won the 2017 Bomem-Michelson Award. Nelson was presented with the award on Tuesday, March 7, at Pittcon in Chicago, Illinois.
Nelson received his PhD from Stanford University (Stanford, California). He joined the faculty at MIT following postdoctoral work at UCLA (Los Angeles, California). Among his achievements is the work he did on the discovery of new light–matter interactions and their exploitation for spectroscopy and control of coherent acoustic waves, lattice and molecular vibrations, excitons, spins, and their admixtures with light. Additionally, he has developed novel methods for study of solid-state chemical reactions, crystals near phase transitions, glass-forming liquids, electronic excited-state dynamics, thermal transport, and matter far from equilibrium. Nelson has also pioneered tabletop generation of strong terahertz-frequency fields and nonlinear terahertz spectroscopy.
Getting accurate IR spectra on monolayer of molecules
April 18th 2024Creating uniform and repeatable monolayers is incredibly important for both scientific pursuits as well as the manufacturing of products in semiconductor, biotechnology, and. other industries. However, measuring monolayers and functionalized surfaces directly is. difficult, and many rely on a variety of characterization techniques that when used together can provide some degree of confidence. By combining non-contact atomic force microscopy (AFM) and IR spectroscopy, IR PiFM provides sensitive and accurate analysis of sub-monolayer of molecules without the concern of tip-sample cross contamination. Dr. Sung Park, Molecular Vista, joined Spectroscopy to provide insights on how IR PiFM can acquire IR signature of monolayer films due to its unique implementation.
Deep Level Transient Spectroscopy Reveals Influence of Defects on 2D Semiconductor Devices
April 25th 2024A recent study used deep level transient spectroscopy to investigate the electrical response of defect filling and emission in monolayer metal-organic chemical vapor deposition (MOCVD)-grown materials deposited on complementary metal-oxide-semiconductor (CMOS)-compatible substrates.