New Steps Toward Development of a Spectrometer-On-Chip Technology
The Molecular Foundry of the Lawrence Berkeley National Laboratory (Berkeley, California) and abeam Technologies (Berkeley, California) recently published results of initial studies of a new technology that opens a unique route to develop spectrometer-on-chip.
The Molecular Foundry of the Lawrence Berkeley National Laboratory (Berkeley, California) and abeam Technologies (Berkeley, California) recently published results of initial studies of a new technology that opens a unique route to develop spectrometer-on-chip. The paper, “Multiband Wavelength Demultiplexer Based on Digital Planar Holography for On-Chip Spectroscopy Applications” appeared in Optics Letters in February.
The report discusses the initial testing of a novel type of multiband wavelength demultiplexer for on-chip spectroscopy applications. The devices are based on computer-designed digital planar holograms, which involve millions of lines specifically located and oriented in order to direct output in the visible range (477.2-478.0 nm, 528-529.9 nm, 586.4-587.7 nm, 628.9-630.4 nm) with 96 channels and spectral channel spacing down to 0.0375 nm/channel.
Getting accurate IR spectra on monolayer of molecules
April 18th 2024Creating uniform and repeatable monolayers is incredibly important for both scientific pursuits as well as the manufacturing of products in semiconductor, biotechnology, and. other industries. However, measuring monolayers and functionalized surfaces directly is. difficult, and many rely on a variety of characterization techniques that when used together can provide some degree of confidence. By combining non-contact atomic force microscopy (AFM) and IR spectroscopy, IR PiFM provides sensitive and accurate analysis of sub-monolayer of molecules without the concern of tip-sample cross contamination. Dr. Sung Park, Molecular Vista, joined Spectroscopy to provide insights on how IR PiFM can acquire IR signature of monolayer films due to its unique implementation.
Deep Level Transient Spectroscopy Reveals Influence of Defects on 2D Semiconductor Devices
April 25th 2024A recent study used deep level transient spectroscopy to investigate the electrical response of defect filling and emission in monolayer metal-organic chemical vapor deposition (MOCVD)-grown materials deposited on complementary metal-oxide-semiconductor (CMOS)-compatible substrates.
