Full SiC Wafer Imaging - Confocal Raman Microscopy for Compositional, Topographic and Mechanical Analysis
Confocal Raman microscopy enables detailed and non-destructive analysis of semiconductors. In the video we present the application of confocal Raman microscopy to analyze material characteristics including doping, stress fields, crystallinity and warpage of a 150 mm (6 inch) silicon carbide (SiC) wafer. To maintain this nanoscale-precision across the macroscopically large x and y dimensions of an entire wafer, we used the WITec alpha300 Semiconductor Edition Raman microscope.
Newsletter
Get essential updates on the latest spectroscopy technologies, regulatory standards, and best practices—subscribe today to Spectroscopy.
Related Content
