In this panel discussion, five SpecAcademy instructors sit down to talk about the main reasons SpecAcademy was started and the current state of spectroscopy education.
News|Articles|January 9, 2025
Full SiC Wafer Imaging - Confocal Raman Microscopy for Compositional, Topographic and Mechanical Analysis
Author(s)Oxford Instruments WITec
Confocal Raman microscopy enables detailed and non-destructive analysis of semiconductors. In the video we present the application of confocal Raman microscopy to analyze material characteristics including doping, stress fields, crystallinity and warpage of a 150 mm (6 inch) silicon carbide (SiC) wafer. To maintain this nanoscale-precision across the macroscopically large x and y dimensions of an entire wafer, we used the WITec alpha300 Semiconductor Edition Raman microscope.
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