Full SiC Wafer Imaging - Confocal Raman Microscopy for Compositional, Topographic and Mechanical Analysis

Confocal Raman microscopy enables detailed and non-destructive analysis of semiconductors. In the video we present the application of confocal Raman microscopy to analyze material characteristics including doping, stress fields, crystallinity and warpage of a 150 mm (6 inch) silicon carbide (SiC) wafer. To maintain this nanoscale-precision across the macroscopically large x and y dimensions of an entire wafer, we used the WITec alpha300 Semiconductor Edition Raman microscope.