SPIE Photonics West Preview
SPIE Photonics West will be held from January 24?29, 2009, at the San Jose Convention Center in San Jose, California. Photonics West is the essential photonics and laser event, attracting researchers and product developers from around the world.
SPIE Photonics West will be held from January 24–29, 2009, at the San Jose Convention Center in San Jose, California. Photonics West is the essential photonics and laser event, attracting researchers and product developers from around the world.
Four symposia will be held during Photonics West. They are: BiOS 2009, on biomedical optics; LASE 2009, on lasers and applications; MOEMS-MEMS 2009, on micro- and nanofabrication; and OPTO 2009, on integrated optoelectronic devices. These symposia will feature 3,275 R&D presentations connecting the brightest minds with leaders in science and technology.
Conference attendees will also have the opportunity to explore more than 75 technical courses and professional development workshops on a wide variety of topics within the photonics industry. Program tracks include such topics as photonic therapeutics and diagnostics, nano/biophotonics, semiconductor lasers and LEDs, and optics and optical engineering.
In addition, the Photonics West Exhibition will be a showcase for the latest innovations in IR sources and detectors, electronic imaging components, fiber optic systems, optics and photonics manufacturing, and sensors and systems.
Exhibit Dates and Hours
Tuesday, January 27 and Wednesday, January 28 10 a.m. to 5 p.m.
Thursday, January 29 10 a.m. to 4 p.m.
Special events at Photonics West include plenary sessions; student events; membership events; and networking, social, and other activities for attendees.
Advance registration information is available on the SPIE website: www.spie.org. Onsite registration will be held at the San Jose Convention Center, Street Level, beginning on Saturday, January 24, from 7:15 a.m. to 5:00 p.m.
Getting accurate IR spectra on monolayer of molecules
April 18th 2024Creating uniform and repeatable monolayers is incredibly important for both scientific pursuits as well as the manufacturing of products in semiconductor, biotechnology, and. other industries. However, measuring monolayers and functionalized surfaces directly is. difficult, and many rely on a variety of characterization techniques that when used together can provide some degree of confidence. By combining non-contact atomic force microscopy (AFM) and IR spectroscopy, IR PiFM provides sensitive and accurate analysis of sub-monolayer of molecules without the concern of tip-sample cross contamination. Dr. Sung Park, Molecular Vista, joined Spectroscopy to provide insights on how IR PiFM can acquire IR signature of monolayer films due to its unique implementation.
Deep Level Transient Spectroscopy Reveals Influence of Defects on 2D Semiconductor Devices
April 25th 2024A recent study used deep level transient spectroscopy to investigate the electrical response of defect filling and emission in monolayer metal-organic chemical vapor deposition (MOCVD)-grown materials deposited on complementary metal-oxide-semiconductor (CMOS)-compatible substrates.
