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TOF-MS and ATD-GC-MS: Comparing Efficiency
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The panel compares traditional ATD-GC-MS methods to emerging TOF-MS approaches for impurity and defect analysis, emphasizing speed and sensitivity advancements.
Accurate impurity detection ensures semiconductor performance and reliability. Experts contrast established methods with newer TOF-MS technology, detailing how faster, more sensitive approaches can expand detection capabilities beyond traditional gas and air sampling.
Key discussion topics include:
- The role of TOF-MS in solid contamination and microdefect analysis.
- Limitations and advantages of thermal desorption and GC-MS.
- How evolving analytical approaches support next-gen device production.
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