The panel compares traditional ATD-GC-MS methods to emerging TOF-MS approaches for impurity and defect analysis, emphasizing speed and sensitivity advancements.
Accurate impurity detection ensures semiconductor performance and reliability. Experts contrast established methods with newer TOF-MS technology, detailing how faster, more sensitive approaches can expand detection capabilities beyond traditional gas and air sampling.
Key discussion topics include:
Get essential updates on the latest spectroscopy technologies, regulatory standards, and best practices—subscribe today to Spectroscopy.