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Deep Level Transient Spectroscopy Reveals Influence of Defects on 2D Semiconductor Devices
April 25th 2024A recent study used deep level transient spectroscopy to investigate the electrical response of defect filling and emission in monolayer metal-organic chemical vapor deposition (MOCVD)-grown materials deposited on complementary metal-oxide-semiconductor (CMOS)-compatible substrates.
Measurement of Ammonia Leakage by TDLAS in Mid-Infrared Combined with an EMD-SG Filter Method
Published: April 9th 2024 | Updated: May 1st 2025In this article, tunable diode laser absorption spectroscopy (TDLAS) is used to measure ammonia leakage, where a new denoising method combining empirical mode decomposition with the Savitzky-Golay smoothing algorithm (EMD-SG) is proposed to improve the signal-to-noise ratio (SNR) of absorbance signals.